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Poster Session (White LEDs-07)

Wednesday 28th November

17:15 to 18:45pm

  1. Near-ultraviolet nitride-based mesh MQW light-emitting diodes
  2. InGaN/GaN single-quantum-well light-emitting diodes with low indium composition
    In0.04Ga0.96N layer
  3. Confocal microscopy as a tool for the study of the emission characteristics of high power LEDs 
  4. Synthesis and characterization of Eu3+activated MGd2 (MoO4)4 (M = Ba,Ca and Sr) based novel red phosphors for LED
  5. Phosphor-free GaN-based transverse junction white-light light-emitting-diode (LED)
  6. Reducing the LED emission blue shift in the screening of the quantum-confined stark effect
    with prestrained growth
  7. Grating formation on a light-emitting diode for light extraction with photoelectrochemical wet etching
  8. Using alloyed and multi-layer metals for shifting surface plasmon coupling wavelength in an InGaN/GaN quantum-well light-emitting diode
  9. Observation of 394 nm electroluminescence from low-temperature sputtered n-ZnO/SiO2 thin films on top of the p-GaN heterostructure
  10. The study of illuminated artistic picture and its color rendering using RGBCMY six colors separated tunable color light source.
  11. Improved surface plasmon coupling with an InGaN/GaN quantum well for light emission enhancement in an LED
  12. Development of white light source by multi-layered red, green, and blue phosphors excited by near ultraviolet light-emitting diodes
  13. Development of light sources by large-scale integrated light-emitting diodes
  14. Study on macro structure of resin for light extraction of near-ultraviolet light-emitting diodes
  15. Simulation of III-nitride and II-oxide LEDs
  16. Angular resolved micro photo luminance spectrum of InGaN quantum wells embedded in plasmonic multilayer structure
  17. Surface plasmon mediated emission enhancement of InGaN MQW by using with surface texture
  18. Doping effect in active region of deep-UV AlGaN light-emitting diodes
  19. Improvement of ultra-deep ultraviolet light emitting diodes with compensated quantum well
  20. Performance improvement of 350-nm-band ultraviolet light-emitting diodes with non-polarization quantum well
  21. Growth of high concentration InGaN and GaN on sacrificial substrate
  22. Polarization property of light extraction from photonic crystal light-emitting diodes
  23. Preparation of BaSi2O5:Eu2+ glass ceramic phosphors and luminescent properties
  24. Internal quantum efficiency of InGaN-based light-emitting diodes fabricated on GaN substrates
  25. Temperature dependence of internal quantum efficiency in InGaN-based light-emitting diodes
  26. GaN-LED's on Nano-etched sapphire substrate by metal-organic chemical vapor deposition
  27. Temperature dependence of near-field photoluminescence distribution in AlGaN-based quantum wells
  28. Realization of 340nm-band high-power UV-LED using p-type InAlGaN
  29. High-quality AlN buffer fabricated on sapphire by NH3 pulse-flow multi-layer growth method for application to deep UV-LEDs
  30. Remarkable enhancement of 254-288 nm deep UV emission from AlGaN quantum wells by using high-quality AlN buffer on sapphire
  31. A sub-wavelength level polarizer with high contract and high tolerance of incident ray's angle in the range of visible wavelength
  32. Beam shaping for high power LED with multi-chip
  33. A precise optical model of phosphor-based multi-chip white Light LEDs
  34. Light extraction analysis of LED using Ray tracing and full-wave simulation
  35. A novel current spreading and blocking design to enhance light emission uniformity and light output power of vertical-structure GaN-based LEDs
  36. Performance of InGaN/GaN light-emitting diodes with various active region structures
  37. Use of micro-etching array to enhance the light output power of vertical-structure GaN-based light-emitting diodes
  38. Properties of 380nm UV light-emitting diodes with a roughened p-GaN
  39. Fabrication of wet-etched patterned sapphire substrates for high-efficiency InGaN/GaN blue light-emitting diodes
  40. High quality GaN epitaxy using AlN/GaN superlattice on Si(111) substrate
  41. Light extraction in patterned n-GaN substrate InGaN-LED
  42. Investigation of InN quantum dots grown on GaN with low indium composition In0.04Ga0.96N interlayer by metalorganic chemical vapor deposition
  43. Polarized light emission for InGaN/GaN multiple-quantum-well resonant cavity light-emitting diodes
  44. LED and semiconductor photo effects on living things
  45. LED valley project in Tokushima prefecture
  46. Psychophysical efficacy improvement of LED lighting by using pulsed operation
  47. Psychophysical efficacy improvement of light source by using pulse operated LEDs
  48. Optimizing the performance of remote phosphor LED
  49. Characteristic analysis of high-power RGB-LED
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