Poster Session (White LEDs-07)
- Call for papers and announcement
- Advance Technical Program
- Poster Session (Wednesday 28th November)
- Poster Session (Thursday 29th November)
Wednesday 28th November
17:15 to 18:45pm
- Near-ultraviolet nitride-based mesh MQW light-emitting diodes
- InGaN/GaN single-quantum-well light-emitting diodes with low indium composition
In0.04Ga0.96N layer - Confocal microscopy as a tool for the study of the emission characteristics of high power LEDs
- Synthesis and characterization of Eu3+activated MGd2 (MoO4)4 (M = Ba,Ca and Sr) based novel red phosphors for LED
- Phosphor-free GaN-based transverse junction white-light light-emitting-diode (LED)
- Reducing the LED emission blue shift in the screening of the quantum-confined stark effect
with prestrained growth - Grating formation on a light-emitting diode for light extraction with photoelectrochemical wet etching
- Using alloyed and multi-layer metals for shifting surface plasmon coupling wavelength in an InGaN/GaN quantum-well light-emitting diode
- Observation of 394 nm electroluminescence from low-temperature sputtered n-ZnO/SiO2 thin films on top of the p-GaN heterostructure
- The study of illuminated artistic picture and its color rendering using RGBCMY six colors separated tunable color light source.
- Improved surface plasmon coupling with an InGaN/GaN quantum well for light emission enhancement in an LED
- Development of white light source by multi-layered red, green, and blue phosphors excited by near ultraviolet light-emitting diodes
- Development of light sources by large-scale integrated light-emitting diodes
- Study on macro structure of resin for light extraction of near-ultraviolet light-emitting diodes
- Simulation of III-nitride and II-oxide LEDs
- Angular resolved micro photo luminance spectrum of InGaN quantum wells embedded in plasmonic multilayer structure
- Surface plasmon mediated emission enhancement of InGaN MQW by using with surface texture
- Doping effect in active region of deep-UV AlGaN light-emitting diodes
- Improvement of ultra-deep ultraviolet light emitting diodes with compensated quantum well
- Performance improvement of 350-nm-band ultraviolet light-emitting diodes with non-polarization quantum well
- Growth of high concentration InGaN and GaN on sacrificial substrate
- Polarization property of light extraction from photonic crystal light-emitting diodes
- Preparation of BaSi2O5:Eu2+ glass ceramic phosphors and luminescent properties
- Internal quantum efficiency of InGaN-based light-emitting diodes fabricated on GaN substrates
- Temperature dependence of internal quantum efficiency in InGaN-based light-emitting diodes
- GaN-LED's on Nano-etched sapphire substrate by metal-organic chemical vapor deposition
- Temperature dependence of near-field photoluminescence distribution in AlGaN-based quantum wells
- Realization of 340nm-band high-power UV-LED using p-type InAlGaN
- High-quality AlN buffer fabricated on sapphire by NH3 pulse-flow multi-layer growth method for application to deep UV-LEDs
- Remarkable enhancement of 254-288 nm deep UV emission from AlGaN quantum wells by using high-quality AlN buffer on sapphire
- A sub-wavelength level polarizer with high contract and high tolerance of incident ray's angle in the range of visible wavelength
- Beam shaping for high power LED with multi-chip
- A precise optical model of phosphor-based multi-chip white Light LEDs
- Light extraction analysis of LED using Ray tracing and full-wave simulation
- A novel current spreading and blocking design to enhance light emission uniformity and light output power of vertical-structure GaN-based LEDs
- Performance of InGaN/GaN light-emitting diodes with various active region structures
- Use of micro-etching array to enhance the light output power of vertical-structure GaN-based light-emitting diodes
- Properties of 380nm UV light-emitting diodes with a roughened p-GaN
- Fabrication of wet-etched patterned sapphire substrates for high-efficiency InGaN/GaN blue light-emitting diodes
- High quality GaN epitaxy using AlN/GaN superlattice on Si(111) substrate
- Light extraction in patterned n-GaN substrate InGaN-LED
- Investigation of InN quantum dots grown on GaN with low indium composition In0.04Ga0.96N interlayer by metalorganic chemical vapor deposition
- Polarized light emission for InGaN/GaN multiple-quantum-well resonant cavity light-emitting diodes
- LED and semiconductor photo effects on living things
- LED valley project in Tokushima prefecture
- Psychophysical efficacy improvement of LED lighting by using pulsed operation
- Psychophysical efficacy improvement of light source by using pulse operated LEDs
- Optimizing the performance of remote phosphor LED
- Characteristic analysis of high-power RGB-LED